Advanced Ta-based diffusion barriers for Cu interconnects by RenГ© HГјbner

Cover of: Advanced Ta-based diffusion barriers for Cu interconnects | RenГ© HГјbner

Published by Nova Science Publishers in New York .

Written in English

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Subjects:

  • Interconnects (Integrated circuit technology),
  • Integrated circuits,
  • Electrodiffusion

Edition Notes

Includes bibliographical references (p. [81]-94) and index.

Book details

StatementRené Hübner.
Classifications
LC ClassificationsTK7874.53 .H83 2009
The Physical Object
Pagination102 p. :
Number of Pages102
ID Numbers
Open LibraryOL23612925M
ISBN 101604564512
ISBN 109781604564518
LC Control Number2008008583

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Thus, barrier layers are needed to prevent Cu diffusion into the insulating layers surrounding the metallic interconnects. Since Ta-based compounds are characterized by a high thermal stability, pure Ta films or layer stacks consisting of Ta and TaN are used for such barriers.

The Paperback of the Advanced Ta-Based Diffusion Barriers for Cu Interconnects by Rene Hubner at Barnes & Noble. FREE Shipping on $35 or more. Due to COVID Author: Rene Hubner. Copper has become the standard metallisation material for on-chip interconnects in high-performance microprocessors.

This book intends to carry out microstructure and functional property investigations for advanced, high-performance Tabased diffusion barriers before and after annealing to compare their thermal stabilities.

Advanced Ta-based diffusion barriers for Cu interconnects. New York: Nova Science Publishers, © (DLC) (OCoLC) Material Type: Document, Internet resource: Document Type: Internet Resource, Computer File: All Authors / Contributors: René Hübner.

Conclusions. Both Ta-Si-N and W-Si-N films have promising properties as diffusion barriers for copper metallization. For Ta-Si-N films with a silicon content of ∼ 20 at%, as an optimised system regarding thermal stability and high conductivity a composition containing ∼ 20 at% nitrogen was : M.

Hecker, R. Hübner, J. Acker, V. Hoffmann, N. Mattern, R. Ecke, S. Schulz, H. Heuer, C. Wenzel. Lo, CL, Zhang, K, Robinson, JA & Chen, ZBEOL compatible sub-nm diffusion barrier for advanced Cu interconnects.

in International Symposium on VLSI Technology, Systems and Application, VLSI-TSA International Symposium on VLSI Technology, Systems and Application, VLSI-TSAInstitute of Electrical and Electronics Engineers Inc., pp.Cited by: 1.

Advanced Ta-Based Diffusion Barriers for Cu Interconnects: Introduction to Graph and Hypergraph Theory: Digital Document Analysis and Processing: From Quantum Computing to Intelligence: Horizons in Computer Science Research.

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